Selective epitaxy using epitaxy-prevention layers

ABSTRACT

A method for forming an epitaxial structure includes providing a two-dimensional material on a crystal semiconductor material and opening up portions of the two-dimensional material to expose the crystal semiconductor material. A structure is epitaxially grown in the portions opened up in the crystal semiconductor material such that the epitaxial growth is selective to the exposed crystal semiconductor material relative to the two-dimensional material.

BACKGROUND Technical Field

The present invention relates to epitaxy processing for semiconductormaterial growth, and more particularly to devices and methods forgrowing epitaxial materials using a prevention layer formed from atwo-dimensional material.

Description of the Related Art

Epitaxial growth processes often open up an oxide or nitride layer toexpose a monocrystalline substrate. The monocrystalline substrateprovides the crystal structure for the epitaxially grown material. Theoxide or nitride layer shields portions of the substrate to directgrowth at specific locations on the substrate. However, it is difficultto completely prevent epitaxy on the oxide or nitride layer. Nucleationalmost always occurs on the surface of the oxide or nitride layer withbroken-bonds being present. The epitaxial growth on the layer alsoaffects etching selectivity for the layer's removal in later steps dueto the build-up of material from the epitaxial deposition.

SUMMARY

A method for forming an epitaxial structure includes providing atwo-dimensional material on a crystal semiconductor material and openingup portions of the two-dimensional material to expose the crystalsemiconductor material. A structure is epitaxially grown in the portionsopened up in the crystal semiconductor material such that the epitaxialgrowth is selective to the exposed crystal semiconductor materialrelative to the two-dimensional material.

Another method for forming an epitaxial structure includes providing atwo-dimensional material on a semiconductor substrate; patterning thetwo-dimensional material by opening up portions to expose thesemiconductor substrate; selectively growing a structure on exposedportions of the semiconductor substrate using an epitaxial growthprocess such that the epitaxial growth is selective to the exposedcrystal semiconductor material relative to the two-dimensional material;removing the two-dimensional material; and processing the structure toform an electronic device.

Yet another method for forming an epitaxial structure includes providinga graphene layer on a silicon carbide substrate; patterning the graphenelayer to expose portions of the substrate; and epitaxially growing asemiconductor structure in the portions of the substrate such that theepitaxial growth is selective to the portions exposed on the substraterelative to the graphene.

These and other features and advantages will become apparent from thefollowing detailed description of illustrative embodiments thereof,which is to be read in connection with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The disclosure will provide details in the following description ofpreferred embodiments with reference to the following figures wherein:

FIG. 1 is a cross-sectional view showing a substrate having atwo-dimensional material provided thereon in accordance with the presentprinciples;

FIG. 2 is a cross-sectional view of FIG. 1 showing the two-dimensionalmaterial patterned to expose the substrate in accordance with thepresent principles;

FIG. 3 is a cross-sectional view of FIG. 1 showing an epitaxially grownstructure formed on the substrate through the two-dimensional materialin accordance with the present principles;

FIG. 4 is a cross-sectional view showing an active layer of a diodeepitaxially grown through a two-dimensional material in accordance withthe present principles;

FIG. 5 is a cross-sectional view of FIG. 4 showing a diode formed inaccordance with the present principles;

FIG. 6 is a cross-sectional view showing source and drain regions of afield effect transistor epitaxially grown through a two-dimensionalmaterial in accordance with the present principles;

FIG. 7 is a cross-sectional view of FIG. 6 showing a field effecttransistor formed in accordance with the present principles; and

FIG. 8 is a block/flow diagram showing methods for forming an epitaxialstructure using an epitaxial prevention layer in accordance withillustrative embodiments.

DETAILED DESCRIPTION

In accordance with the present principles, an epitaxial prevention layeris provided to conduct highly selective epitaxial deposition on asubstrate or other semiconductor layer. The epitaxial prevention layerincludes a two-dimensional (2D) material, such as graphene, MoS₂, WS₂,etc. Using the 2D material as an epitaxy-prevention layer, no brokenbonds (sp² bonding) occur on the surface of the 2D material as it iseasier to control the nucleation on the surface of these sp² bondedmaterials. Without these broken bonds, epitaxial growth is moreselective to exposed substrate portions or other layers and growth issignificantly reduced on the 2D materials. In accordance with thepresent principles, this approach may be employed for fabricatingsemiconductor devices, such as light emitting diodes (LEDs), fieldeffect transistors, lasers and any other electronic or photonic device.

2D materials can be transferred or grown on a wafer before epitaxialgrowth is performed and then by using, e.g., lithography, the area thatneeds to have epitaxial growth can be patterned in the 2D materials.After the epitaxial growth, the 2D material is removed by, e.g., dryetching, such as, e.g., O₂ plasma etching for graphene.

It is to be understood that the present invention will be described interms of a given illustrative architecture; however, otherarchitectures, structures, substrate materials and process features andsteps may be varied within the scope of the present invention.

It will also be understood that when an element such as a layer, regionor substrate is referred to as being “on” or “over” another element, itcan be directly on the other element or intervening elements may also bepresent. In contrast, when an element is referred to as being “directlyon” or “directly over” another element, there are no interveningelements present. It will also be understood that when an element isreferred to as being “connected” or “coupled” to another element, it canbe directly connected or coupled to the other element or interveningelements may be present. In contrast, when an element is referred to asbeing “directly connected” or “directly coupled” to another element,there are no intervening elements present.

A design for an integrated circuit chip or photonic device may becreated in a graphical computer programming language, and stored in acomputer storage medium (such as a disk, tape, physical hard drive, orvirtual hard drive such as in a storage access network). If the designerdoes not fabricate chips or the photolithographic masks used tofabricate chips, the designer may transmit the resulting design byphysical means (e.g., by providing a copy of the storage medium storingthe design) or electronically (e.g., through the Internet) to suchentities, directly or indirectly. The stored design is then convertedinto the appropriate format (e.g., GDSII) for the fabrication ofphotolithographic masks, which typically include multiple copies of thechip design in question that are to be formed on a wafer. Thephotolithographic masks are utilized to define areas of the wafer(and/or the layers thereon) to be etched or otherwise processed.

Methods as described herein may be used in the fabrication of integratedcircuit chips or photonic devices. The resulting integrated circuitchips or photonic devices can be distributed by the fabricator in rawwafer form (that is, as a single wafer that has multiple unpackagedchips), as a bare die, or in a packaged form. In the latter case thechip is mounted in a single chip package (such as a plastic carrier,with leads that are affixed to a motherboard or other higher levelcarrier) or in a multichip package (such as a ceramic carrier that haseither or both surface interconnections or buried interconnections). Inany case the chip or device is then integrated with other chips,discrete circuit elements, and/or other signal processing devices aspart of either (a) an intermediate product, such as a motherboard, lightsource, etc., or (b) an end product. The end product can be any productthat includes integrated circuit chips, ranging from toys and otherlow-end applications to advanced computer products having a display, akeyboard or other input device, and a central processor or any devicethat includes light emitting diodes or other photonic devices.

It should also be understood that material compounds will be describedin terms of listed elements, e.g., GaN, AlGaN, SiC, etc. These compoundsinclude different proportions of the elements within the compound, e.g.,GaN includes Ga_(x),N_(1−x), where x is less than or equal to 1, or SiCincludes Si_(x)C_(1−x) where x is less than or equal to 1, etc. Inaddition, other elements may be included in the compound and stillfunction in accordance with the present principles. The compounds withadditional elements will be referred to herein as alloys.

The present embodiments may be part of a photonic device or circuit, andthe circuits as described herein may be part of a design for anintegrated circuit chip, a printed wiring board, a display device,appliances, a light emitting device, etc.

Reference in the specification to “one embodiment” or “an embodiment” ofthe present principles, as well as other variations thereof, means thata particular feature, structure, characteristic, and so forth describedin connection with the embodiment is included in at least one embodimentof the present principles. Thus, the appearances of the phrase “in oneembodiment” or “in an embodiment”, as well any other variations,appearing in various places throughout the specification are notnecessarily all referring to the same embodiment.

It is to be appreciated that the use of any of the following “/”,“and/or”, and “at least one of”, for example, in the cases of “A/B”, “Aand/or B” and “at least one of A and B”, is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of both options (A andB). As a further example, in the cases of “A, B, and/or C” and “at leastone of A, B, and C”, such phrasing is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of the third listedoption (C) only, or the selection of the first and the second listedoptions (A and B) only, or the selection of the first and third listedoptions (A and C) only, or the selection of the second and third listedoptions (B and C) only, or the selection of all three options (A and Band C). This may be extended, as readily apparent by one of ordinaryskill in this and related arts, for as many items listed.

Referring now to the drawings in which like numerals represent the sameor similar elements and initially to FIG. 1, a cross-sectional view of asubstrate 12 having a 2D material 14 formed or transferred thereon isshown in accordance with one illustrative embodiment. The substrate 12may include a monocrystalline semiconductor material, such as SiC, Si,Ge, SiGe, GaAs, InGaAs or any other suitable substrate material. The 2Dlayer 14 may include graphene, MoS₂, WS₂ or any other suitable 2Dmaterial. A two-dimensional (2D) material may include a material withstrong bonds in two dimensions and weak bonds in a third dimension. A 2Dmaterial may include weak Van der Waals forces perpendicular to a layer(weak vertical bonding) such that the material separates easily alongatomic layers or strata (e.g., strength in 2D directions). Such 2Dmaterials include saturated bonds (e.g., sp² bonds) along theirhorizontal surfaces.

In one embodiment, the 2D material includes graphene, and the graphenemay be formed on a SiC substrate 12. In such an embodiment, graphene maybe employed for 2D material 14 and may be formed by a thermaldecomposition of the (0001) face of a SiC wafer (substrate 12). Siremoval from the SiC surface results in the formation of graphene at thesurface of SiC. In another embodiment, epitaxial carbon monolayerdeposition may be employed to form graphene on the surface of the SiCsubstrate 12.

Graphene may be formed by heating SiC substrates to temperatures greaterthan 1000 degrees C. resulting in Si evaporation out from the substratesleaving one or more monolayers of single crystalline carbon (graphene).Any single crystalline material whose lattice matches the SiC substrate12, e.g., the graphene lattice matches well to SiC substrates), can begrown on top of graphene.

Epitaxial graphene can be grown on semi-insulating 4H- or 6H-(0001) SiCwafer surfaces within an induction-heated graphite susceptor located inan evacuation chamber (e.g., a stainless steel vacuum chamber or quartztube furnace) using a multistep process comprising surface preparationsteps. For example, these steps may include annealing at 810° C. for 10min and 1140° C. for 7 min under flow of 20% disilane in He, orannealing at a temperature around 1600° C. in H₂ gas. Then, agraphenization step is employed at about 1450-1620 degrees C. under Arflow at a chamber pressure from 3.5 mTorr to 900 mTorr for durations of5 min to 2 hours. Other process parameters are also contemplated.

While a crystalline graphene layer may be employed, in otherembodiments, a polycrystalline graphene may be grown on a foil, such asa Cu foil using, e.g., chemical vapor deposition or other processes.Although electrical quality of this graphene is lower than SiC graphene,the sp² surface remains bonded. Transferring polycrystalline graphene toa Si wafer may be performed and then the graphene is employed as an etchmask in any selective epitaxy situation. For example, Ge growth on Si orSiGe growth on Si or SiC growth on Si, etc.

Graphene (2D layer 14) is atomically smooth and when applied to thesubstrate 12, a small thickness is desired. In one embodiment, thethickness of the graphene layer 14 is preferably 1-5 monolayers,although greater thicknesses may be employed.

In another embodiment, 2D layer 14 may be transferred to the substrate12 by a transfer process. The transfer process may include the use of atransfer substrate (not shown) to carry the 2D layer 14 to substrate 12and transfer the 2D layer 14 to the substrate 12.

Referring to FIG. 2, the 2D layer 14 is patterned to form openings 17therethrough to expose portions of the underlying substrate 12.Patterning may be performed by lithography or other patterningprocesses. Lithography may include depositing material such as aphotoresist or other material and developing the photoresist to form anetch mask. The etch mask includes openings where the 2D layer 14 isexposed and regions that protect portions of the 2D layer 14. Theopenings where the 2D material 14 is exposed are subjected to an etchant(e.g., a dry or wet etchant) to remove the 2D material 14 in accordancewith a pattern and expose the underlying substrate 12 in exposed areas16. The patterning process may include other materials to form hardmasks or the like, and the etching process may include suitable etchchemistries configured to remove the 2D material 14 without significantdamage to the substrate 12. If graphene is employed for layer 14, an 02plasma may be employed to remove the graphene to expose areas 16. Theetch mask (not shown) is removed.

Referring to FIG. 3, exposed areas 16 of substrate 12 provide sites forepitaxial growth. Epitaxial growth may be performed by any number ofprocesses including vapor-phase epitaxy (VPE) (a modification ofchemical vapor deposition (CVD)), molecular bean epitaxy (MBE),liquid-phase epitaxy (LPE), Metal-Organic Chemical Vapor Deposition(MOCVD), Organometallic Vapor Phase Epitaxy (OMVPE), etc. The presentprinciples focus on highly selective epitaxial deposition processes;however, the present principles may be employed for other depositionprocesses as well, e.g., atomic layer deposition, chemical vapordeposition, etc.

By employing the 2D layer 14 as a mask, the occurrence of nucleation dueto broken bonds is significantly reduced and as well as the formation ofthe epitaxial growth product on the 2D material 14. Epitaxially grownmaterial 18 forms selectively on the exposed substrate 12 in regions 16.Epitaxially grown material 18 may form a structure employed in formingan electronic device.

Referring to FIG. 4, one embodiment shows steps for forming a diode 30by highly selective epitaxial growth. Starting with a single crystalsubstrate 20, intermediary active layers 22 may be formed (with orwithout the use of a 2D material as will be described). A 2D layer 24 isformed on or transferred to the substrate 20 or intermediary activelayer(s) 22 and patterned as described with reference to FIGS. 1 and 2.A semiconductor material 26, such as, e.g., a III-V material, e.g., GaN,InGaN, etc. is epitaxially grown. The 2D layer 24 may include graphenewhich is etchable with an O₂ plasma to pattern the layer 24.

In particularly useful embodiments, intermediary layer 22 may include ap-doped (or n-doped) layer, while layer 26 may include an oppositelydoped layer from layer 22 (n-doped or p-doped, respectively). The layers22 and 26 form a p-n junction of the diode 30. In one embodiment, SiCmay be employed for the substrate 20 and GaN may be employed for layers22 and 26 (e.g., epitaxially grown semiconductor layers). Thesematerials have less lattice-mismatch (closer lattice constants for SiCand GaN). The closer lattice constants result in improved performanceand reliability with minimal dislocation density in GaN films.

The structures and processes described herein will refer to LED devicesfor simplicity; however, the present principles are applicable to anyelectronic devices, such as transistors, photonic devices, lasers, etc.especially those employing difficult to process III-nitride materials toform electronic devices, in accordance with the present principles.

The diode 30 includes the substrate 20, a p-doped layer 22 (or n-doped)and an n-doped layer 26 (or p-doped). While the structure described andshown in accordance with the present principles is particularly usefulfor n-type diodes, doping changes and materials may be adjusted toimplement the present principles in p-type devices as well. In oneembodiment, the substrate 22 may include SiC, a III-V material, such asInP, Si or other substrate material. The p-doped layer 22 may include ap-doped III-V layer (e.g., III-N material, such as GaN). In oneembodiment, InGaAs may be employed. The p-doped layer 22 may beselectively grown at predetermined locations by providing a patterned 2Dmaterial as described above. The n-doped layer 26 may be epitaxiallygrown through an opening in the 2D material 24. The opening in the 2Dmaterial 24 locates the device on the layer 22 (or on the substrate 20if layer 22 is not employed). A III-V material may be employed forn-doped layer 26. The n-type layer may include InGaAs or other III-Vmaterial (e.g., III-N, such as GaN). In one particularly usefulembodiment, the n-type layer 26 includes a same base material as thep-type layer 22. The 2D material 24 may be removed or may be employedfor epitaxially growing additional layers on the n-doped layer 26. Thep-doped layer 22 and the n-doped layer 26 are preferably crystalline inform. This preferably includes a monocrystalline structure although amulti-crystal structure may be employed.

Referring to FIG. 5, a contact 28 is formed on layer 26. The contact 28may include metal contacts, e.g., Al, W, Pd, Pt, Au, Ag, etc. alone ortogether in a bi-layer structure. It should be understood that otherlayers may be employed for diodes having different properties orfunctions. For example, additional layers, such as blocking layers,active layers (including active layer stacks, e.g., a multiple quantumwell (MQW) structure), contact layers, buffer layers, etc. may beemployed and at least some of these layers may employ epitaxy preventionlayers (2D material) as described herein.

While a diode structure is illustratively shown to demonstrate thepresent principles, it should be understood that the present principlesare applicable to any structure where selective deposition is useful. Inone particularly useful application, the structure includes a laserdiode or other laser structure. Other embodiments may include passiveelectrical elements, p-n junctions, etc.

Referring to FIG. 6, a cross-section of a partially fabricated fieldeffect transistor (FET) 50 is shown in accordance with one illustrativeexample. The FET 50 includes a substrate 52, a p-doped layer 54 andn-type source and drain regions 56 formed through openings in a 2Dmaterial 58. While the structures described and shown in accordance withthe present principles are particularly useful for n-FETs, dopingchanges and materials may be adjusted to implement the presentprinciples in p-FET devices as well. In one embodiment, the substrate 52may include SiC, a III-V materials, Si material or other suitablematerial.

The p-doped layer 54 may include a p-doped InGaAs layer although otherIII-V materials may be employed. The n-doped layer 56 is preferablycrystalline in form and grown epitaxially. This includes amonocrystalline structure and may include a multi-crystal structure.

Referring to FIG. 7, the FET 50 is further processed by forming a gatedielectric 62, e.g., HfO₂, Al₂O₃, or other high dielectric constantmaterial. A gate electrode 64 and spacers 68 are then formed. The gateelectrode 64 may include any suitable highly conductive material, e.g.,Cu, Cr, Au, Ag, etc. Contacts 66 are also formed on the S/D regions 56through a dielectric material 68. The contacts 66 may include contactmetals. For example, the FET 50 may include metal contacts in a bi-layerof, e.g., Al and Au. An Al liner may be placed on the S/D regions 56followed by a highly conductive material such as Au or Pt. Other metalsor combinations of metals are also contemplated.

It should be understood that the present principles are not limited tothe structures depicted in the FIGS. as these structures are providedfor illustration purposes. The present principles may be applied to anytype of diode, transistor, junction, device, etc. where an epitaxialfilm is selectively formed. In particularly useful embodiments, aninverter structure may be formed in accordance with the presentprinciples. For example, an InGaAs nMOSFET (metal oxide semiconductorfield effect transistor) and a Ge pMOSFET may be formed. While growingthe InGaAs channel on a Si wafer, the pMOSFET area may be covered withgraphene to process the nMOSFET. Then, the nMOSFET area can be coveredwith graphene while growing the Ge pMOSFET channel. Other selectiveepitaxial growth applications are also contemplated.

Referring to FIG. 8, a method for forming an epitaxial structure usingepitaxy prevention layers is illustratively shown. The flowcharts in theFigures illustrate the architecture, functionality, and operation ofpossible implementations of the present invention. In some alternativeimplementations, the functions noted in the block may occur out of theorder noted in the figures. For example, two blocks shown in successionmay, in fact, be executed substantially concurrently, or the blocks maysometimes be executed in the reverse order, depending upon thefunctionality involved. It will also be noted that each block of theblock diagrams and/or flowchart illustration, and combinations of blocksin the block diagrams and/or flowchart illustration, can be implementedby special purpose hardware-based systems that perform the specifiedfunctions or acts or carry out combinations of special purpose hardwareand computer instructions.

In block 102, a two-dimensional (2D) material is provided on a crystalsemiconductor material. The crystal semiconductor material may include asubstrate or other semiconductor layers. The substrate/layers preferablyinclude monocrystalline material although multi-crystal material may beemployed. The substrate or other layers may include any suitablesemiconductor suitable for epitaxial growth (e.g., III-V materials, Si,Ge, combinations thereof, etc.). The two dimensional material mayinclude graphene, MoS₂, WS₂ or any other suitable 2D material. The 2Dmaterial may be mono-crystalline or polycrystalline.

In block 104, the 2D material may be grown on the underlying layer(crystal semiconductor material) using an epitaxial growth process. Thecrystal semiconductor material may include SiC, and the 2D material mayinclude a graphene layer, which is grown on the SiC, e.g., agraphenization process may be employed.

In block 106, the 2D material may be transferred from a transfer orhandle substrate (e.g., foil) to the crystal semiconductor material. Thetwo-dimensional material is transferred to the crystal semiconductormaterial by a layer transfer process. The 2D material is adhered orotherwise positioned on the crystal semiconductor material.

In block 108, the 2D material is patterned to expose positions on thecrystal semiconductor material where selective epitaxial growth is to beperformed. A mask may be employed to pattern the 2D material. In oneembodiment, lithographic processing is employed to pattern the 2Dmaterial by employing a photoresist mask and etching the 2D material.Lithographic processing is known in the art. The patterning processresults in opening up portions of the two-dimensional material to exposethe crystal semiconductor material. Opening up portions of thetwo-dimensional material may include etching into the crystalsemiconductor material to ensure a clean surface for epitaxial growth.

In block 110, epitaxially growing a structure in the portions opened upin the crystal semiconductor material such that the epitaxial growth isselective to the exposed crystal semiconductor material relative to thetwo-dimensional material is performed. The 2D material includes strongbonds in the horizontal plane (plane along the layer), which occupyelectrons associated with the atoms of the 2D material. This results infewer broken bonds and therefore fewer nucleation sites for epitaxialgrowth on top of the 2D material.

In block 112, the two-dimensional material is preferably removed by anetching process. For example, graphene may be removed using an O₂ plasmaetch, although other etchants and etching processes may be employed. The2D material may be employed for forming multiple epitaxially grownlayers before removing the 2D material (e.g., to form a stack ofselectively grown materials). Since the epitaxial material is notdeposited on the surface of the 2D material (e.g., due to lack ofnucleation sites), the 2D material is easily removed without depositionof the epitaxial material.

In block 114, the epitaxially formed structure or layer may be employedto form an electronic device. The electronic device may include atransistor, a diode, a laser or any other structure or device.

Having described preferred embodiments for selective epitaxy usingepitaxy-prevention layers (which are intended to be illustrative and notlimiting), it is noted that modifications and variations can be made bypersons skilled in the art in light of the above teachings. It istherefore to be understood that changes may be made in the particularembodiments disclosed which are within the scope of the invention asoutlined by the appended claims. Having thus described aspects of theinvention, with the details and particularity required by the patentlaws, what is claimed and desired protected by Letters Patent is setforth in the appended claims.

1. A method for forming an epitaxial structure, comprising: opening upportions of a two-dimensional material on a semiconductor material toexpose the semiconductor material; and epitaxially growing a structurein the portions opened up in the semiconductor material such that theepitaxial growth is selective to the exposed semiconductor materialrelative to the two-dimensional material.
 2. The method as recited inclaim 1, wherein the two dimensional material includes graphene.
 3. Themethod as recited in claim 1, wherein the two dimensional materialincludes MoS₂ or WS₂.
 4. The method as recited in claim 1, wherein thetwo-dimensional material is transferred to the semiconductor material bya layer transfer process.
 5. The method as recited in claim 1, whereinopening up portions of the two-dimensional material includes forming anetch mask using lithography and etching the two-dimensional material toopen up the portions.
 6. The method as recited in claim 1, furthercomprising removing the two-dimensional material.
 7. A method forforming an epitaxial structure, comprising: patterning a two-dimensionalmaterial on a semiconductor substrate by opening up portions of thetwo-dimensional material to expose the semiconductor substrate;selectively growing a structure on exposed portions of the semiconductorsubstrate using an epitaxial growth process such that the epitaxialgrowth is selective to the exposed semiconductor material relative tothe two-dimensional material; and removing the two-dimensional material.8. The method as recited in claim 7, wherein the two dimensionalmaterial includes graphene.
 9. The method as recited in claim 7, whereinthe two dimensional material includes MoS₂ or WS₂.
 10. The method asrecited in claim 7, wherein the two-dimensional material is transferredto the semiconductor substrate by a layer transfer process.
 11. Themethod as recited in claim 7, wherein patterning includes forming anetch mask using lithography and etching the two-dimensional material toopen up the portions.
 12. The method as recited in claim 7, whereinprocessing the structure includes forming a transistor.
 13. The methodas recited in claim 7, wherein processing the structure includes formingone of a diode or a laser.
 14. A method for forming an epitaxialstructure, comprising: patterning a graphene layer on a silicon carbidesubstrate to expose portions of the substrate; and epitaxially growing asemiconductor structure in the portions of the substrate such that theepitaxial growth is selective to the portions exposed on the substraterelative to the graphene.
 15. The method as recited in claim 14, whereinthe graphene layer is transferred to the substrate by a layer transferprocess.
 16. The method as recited in claim 14, wherein patterningincludes forming an etch mask using lithography and etching the graphenelayer to open up the portions.
 17. The method as recited in claim 14,wherein epitaxially growing a semiconductor structure includesepitaxially growing GaN on the substrate.
 18. The method as recited inclaim 14, wherein processing the structure includes forming one of adiode or a laser.
 19. The method as recited in claim 14, whereinprocessing the structure includes forming a transistor.
 20. The methodas recited in claim 14, further comprising removing the graphene layer.